发明名称 CONDUCTIVE MATERIAL PATTERNING METHODS
摘要 A patterning method includes providing a first material (30) (e.g., copper) and transforming at a least a surface region of the first material to a second material (32) (e.g., copper oxide). One or more portions of the second material (e.g., copper oxide) are converted to one or more converted portions (34) of first material (e.g., copper) while one or more portions of the second material (32) (e.g., copper oxide) remain. One or more portions of the remaining second material (32) (e.g., copper oxide) are removed selectively relative to converted portions of first material (e.g., copper). Further, a thickness of the converted portions may be increased. Yet further, a diffusion barrier layer barrier layer may be used for certain applications.
申请公布号 WO0217387(A9) 申请公布日期 2003.10.30
申请号 WO2001US26484 申请日期 2001.08.24
申请人 发明人 GEUSIC, JOSEPH, E.;REINBERG, ALAN, R.
分类号 H01L21/321;H01L21/3213;H01L21/44;H01L21/768;H05K3/02;H05K3/10;(IPC1-7):H01L21/768 主分类号 H01L21/321
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