| 摘要 |
PURPOSE: A method for forming a device isolation film of a semiconductor device is provided to improve the interface characteristic between a SEG(silicon epitaxial growth) layer on a portion of a trench and a device isolation film and an oxide layer spacer, and electrical characteristic accordingly. CONSTITUTION: A nitride and oxide pattern are formed on a semiconductor substrate(21) with a trench. A thermal oxidation layer is formed and then etched on the surface of the trench to remove the damage of the surface. An oxide layer(26) is formed on the whole surface. An oxide layer spacer(27) is formed and the bottom surface of a trench is exposed by etching. A SEG silicon layer(28) is formed on a portion of the bottom surface of the trench. A second thermal oxide layer(29) is formed to make the edge of the SEG silicon layer round. A device isolation film(30) is formed and the oxide and nitride pattern are removed.
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