| 摘要 |
A semiconductor device includes at least one thin-film transistor, which includes a semiconductor layer, a gate electrode and a gate insulating film. In the semiconductor layer, a crystalline region, including a channel forming region, a source region and a drain region, is defined. The gate electrode is provided to control the conductivity of the channel forming region. The gate insulating film is provided between the gate electrode and the semiconductor layer. The semiconductor layer includes a gettering region outside of the crystalline region thereof.
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