发明名称 |
APPARATUS AND METHOD FOR DEPOSITING THIN FILM ON WAFER USING REMOTE PLASMA |
摘要 |
A remote-plasma ALD apparatus includes a reaction chamber, an exhaust line for exhausting gas from the reaction chamber, a first reactive gas supply unit for selectively supplying a first reactive gas to the reactant chamber or the exhaust line, a first reactive gas transfer line for connecting the first reactive gas supply unit and the reactant chamber, a first bypass line for connecting the first reactive gas supply line and the exhaust line, a radical supply unit for generating radicals and selectively supplying the radicals to the reactant chamber or the exhaust line, a radical transfer line for connecting the radical supply unit and the reactant chamber, a second bypass line for connecting the radical supply unit and the exhaust line, and a main purge gas supply unit for supplying a main purge gas to the first reactant transfer line and/or the radical transfer line. |
申请公布号 |
WO03089683(A1) |
申请公布日期 |
2003.10.30 |
申请号 |
WO2003KR00786 |
申请日期 |
2003.04.17 |
申请人 |
IPS LTD.;PARK, YOUNG-HOON;LIM, HONG-JOO;LEE, SANG-KYU;KYUNG, HYUN-SOO;BAE, JANG-HO |
发明人 |
PARK, YOUNG-HOON;LIM, HONG-JOO;LEE, SANG-KYU;KYUNG, HYUN-SOO;BAE, JANG-HO |
分类号 |
C23C16/44;C23C16/452;C23C16/455;H01L21/205;H01L21/31;H01L21/316 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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