| 摘要 |
A method for reducing the resistance within an opening, such as a via, in a dielectric (230) is described herein. A first barrier layer (250) is formed within the opening and the portion of the first barrier layer (250) at the bottom of the opening is removed, thereby exposing an underlying metal line (210). Deposited within the opening over the first barrier layer (250) and in contact with a conductor (210), a thin second barrier layer (260) forms a barrier between the conductor (210) and subsequently formed conductive material (270 and 280) within the opening. Because the second barrier layer (260) is thin, resistance is minimized between the conductor (210) and the conductive material (270 and 280). Additionally, if the opening is not aligned with the metal line (210), the second barrier layer (260) prevents the conductive material (270 and 280) from degrading an underlying dielectric (220) that may be present underneath the opening.
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