Connection terminals and manufacturing method of the same, semiconductor device and manufacturing method of the same

摘要

A first protection film (3) and a second protection film (4) are formed on an electrode pad (2). Bumps (5) are formed at sites where the deposited first and second protection films (3), (4) are both removed. The openings (3a) where the lower, first protection film (3) is removed are larger than the openings (4a) where the upper, second protection film (4) is removed, so that the upper, second protection film (4) has an overhanging structure. The bottom periphery of the bump (5) is formed to extend under the second protection film (4).