| 摘要 |
<p>A magnetoresistance effect element comprises a multilayered film structure including a tunnel insulating layer (3) and a pair of magnetic layers (1 and 2) stacked via the tunnel insulating layer (3) and has different resistance values with relative angles in the magnetizing direction belonging to both magnetic layers (1 and 2). At least one of the magnetic layers (1 and 2) includes a magnetic film (4) having a coefficient of thermal expansion less than the sum value of the coefficient of thermal expansion of the tunnel insulating layer (3) and 2 × 10-6/K. A magnetoresistance effect element of such a structure provides an excellent heat resistance. The use of this magnetoresistance element enables a magnetic head excellent in heat resistance, a magnetic memory, and a magnetic recorder.</p> |
