| 摘要 |
The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a reaction chamber. At least a fragment of a precursor material is chemisorbed on a substrate within the reaction chamber while not exposing the precursor material to microwave radiation from the source. Excess precursor material is removed from the chamber, and the chemisorbed material is subsequently exposed to microwave radiation from the source within the reaction chamber.
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