| 摘要 |
In a semiconductor device including one or more semiconductor containing lines, such as gate electrodes of transistor elements, and/or active areas, sidewall spacer elements of the one or more semiconductor containing lines include a conductive layer that also covers a surface portion of the lines and extends to another semiconductor containing line or an active region to serve as a local interconnect. The sidewall spacer process sequence is modified to obtain the local interconnects along with the sidewall spacers without unduly contributing to process complexity. The conductive layers in the sidewall spacer elements, which may preferably comprise a metal, significantly improve the overall conductivity of these lines. Thus, the present invention offers increased design flexibility and the potential of increasing feature density.
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