Apparatus for ion beam implantation

摘要

This invention discloses an ion implantation apparatus that has an ion source and an ion extraction means for extracting an ion beam therefrom. The ion implantation apparatus further includes an ion beam sweeping-and-deflecting means disposed immediately next to the ion extraction means. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping means. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting means is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation. In a preferred embodiment, the ion implantation apparatus further includes a plasma electron flood system disposed between the mass slit and the substrate for projecting a plurality of electrons to the ion beam for preventing a space-charge and beam dispersion. In another preferred embodiment, the ion beam extraction and projecting system of this invention further includes a divergent ion-beam extracting optics for extracting an ion beam with a small divergent angle for projecting and diverging the ion beam as the ion beam is projected toward the target surface.