High-transmittance halftone phase shift mask and manufacturing method of semiconductor device

摘要

The high-transmittance halftone phase shift mask is structured, in a first phase shift pattern region, with a transmission region exposing a transparent substrate and having a rectangular (square) two-dimensional shape; a phase shift region surrounding the transmissive region exposing halftone phase shift film and having a rectangular shape two-dimensional shape; and a light shielding region surrounding the phase shift region and formed of a light shielding film provided on the halftone phase shift film. With the present mask, a high-transmittance halftone phase shift mask that can transfer desired pattern clearly on the photosensitive resin and a method for producing semiconductor devices using the mask can be attained.