| 摘要 |
PURPOSE: A method for forming a dual damascene structure of a semiconductor device is provided to be capable of minimizing the thickness of a photoresist and the generation of metallic polymer. CONSTITUTION: A diffusion barrier layer(104), a low-permittivity interlayer dielectric(106"), a metal hard mask are sequentially formed on a substrate(100) having a lower metal line(102). The metal hard mask is selectively etched using the first photoresist pattern. A tungsten hard mask is then deposited to expose the metal hard mask pattern. Then, a metal interconnection region is patterned. An oxide hard mask(116) is formed to expose the tungsten hard mask pattern. After removing the tungsten hard mask pattern, a via hole is formed by patterning the exposed interlayer dielectric(106"). After removing the metal hard mask pattern, a trench is formed by selectively etching the interlayer dielectric(106").
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