| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to enhance breakdown voltage and capacitance by preventing recess phenomenon of a dielectric film in MIN capacitor. CONSTITUTION: The first metal film(120), a dielectric film(130) and the second metal film are sequentially deposited on a lower layer(110). An upper electrode(142) is formed by patterning the second metal film. A buffer layer(150) is deposited on the entire surface of the resultant structure. The buffer layer and the dielectric film are selectively etched to expose the first metal film(120). At this time, the buffer layer(150) remains at sidewalls of the upper electrode(142), thereby preventing recess of the dielectric film(130). A lower electrode is then formed by patterning the exposed first metal film.
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