| 摘要 |
A magnetoresistive sensor and a method of manufacturing the magnetoresistive sensor are provided, which can effectively increase DeltaRA, and which can more easily and reliably bring magnetization of a free magnetic layer and magnetization of a pinned magnetic layer into an orthogonal state than the related art. By forming the pinned magnetic layer of a multilayered structure comprising a first hard magnetic layer, a nonmagnetic layer, and a second hard magnetic layer, the magnetization of the free magnetic layer and the magnetization of the pinned magnetic layer can be more easily and reliably brought into an orthogonal state than in the related art. Also, the pinned magnetic layer can be formed in a larger film thickness than that in the related art. Accordingly, the product (DeltaRA) of a resistance change amount (DeltaR) and a sensor area (A) in a direction parallel to film surfaces can be increased.
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