发明名称 |
Plasma polymerized electron beam resist |
摘要 |
A process for producing a pattern of negative electron beam resist comprises: depositing a layer of plasma polymerized fluoropolymer on a face of a substrate, the plasma polymerized fluoropolymer forming the negative electron beam resist; producing an electron beam; moving the electron beam on the layer of plasma polymerized fluoropolymer to define the pattern, the layer then having exposed fluoropolymer areas defining the pattern and unexposed fluoropolymer areas; and removing the unexposed fluoropolymer areas to leave only the pattern on the face of the substrate. According to an alternative, the process comprises: depositing the layer of negative electron beam resist on a face of a substrate; producing an electron beam; moving the electron beam on the layer of negative electron beam resist to define the pattern, the layer then having exposed resist areas defining the pattern and unexposed resist areas; treating the patterned layer with a base solution to decrease a dry etch resistance of the unexposed resist areas; and dry etching the unexposed resist areas to leave only the pattern on the face of the substrate.
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申请公布号 |
US2003203648(A1) |
申请公布日期 |
2003.10.30 |
申请号 |
US20020131030 |
申请日期 |
2002.04.25 |
申请人 |
AWAD YOUSEF;LAVALLEE ERIC;BEAUVAIS JACQUES;DROUIN DOMINIQUE |
发明人 |
AWAD YOUSEF;LAVALLEE ERIC;BEAUVAIS JACQUES;DROUIN DOMINIQUE |
分类号 |
G03F7/004;G03F7/038;G03F7/20;G03F7/36;G03F7/38;H01L21/027;H01L21/311;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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