INDEX TUNED MULTIMODE INTERFERENCE COUPLER

摘要

Index tuned multimode interference coupler epitaxially grown on an n-type doped substrate. The index tuned multimode interference coupler includes an intrinsic region epitaxially grown on the substrate and a p-type doped region grown on the insulating region. The semiconductor regions are formed so as to act as a pin diode. Ohmic contacts are formed on the p-type doped region and the n-type doped substrate. The ohmic contacts allow the application of an electric field so that the index of refraction of the pin diode can be tuned. This allows the active control of the device performance.