| 发明名称 |
Organometal complex and method of depositing a metal silicate thin layer using same |
| 摘要 |
The present invention relates to an organometal complex and a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method for preparing a metal silicate thin layer using same. The inventive method can easily prepare the metal silicate thin layer having a desired composition which can be effectively used as a gate insulating layer for various semiconductor devices.
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| 申请公布号 |
US2003203126(A1) |
申请公布日期 |
2003.10.30 |
| 申请号 |
US20030423337 |
申请日期 |
2003.04.25 |
| 申请人 |
RHEE SHI-WOO;KANG SANG-WOO;NAM WON-HEE |
发明人 |
RHEE SHI-WOO;KANG SANG-WOO;NAM WON-HEE |
| 分类号 |
C07F7/00;C07F7/12;C07F19/00;C23C16/18;C23C16/40;C23C16/44;C23C16/455;H01L21/314;H01L21/316;(IPC1-7):C23C8/00;H01L21/44;C23C10/10 |
主分类号 |
C07F7/00 |
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