CHEMICAL MECHANICAL POLISHING (CMP) HEAD, APPARATUS, AND METHOD AND PLANARIZED SEMICONDUCTOR WAFER PRODUCED THEREBY

摘要

Chemical Mechanical Polishing/Planarization (CMP) apparatus, method, and substrate produced thereby. Polishing surface with non-uniform recesses therein. CMP head and method having integral slurry dispensing mechanism. CMP apparatus and method having rotating retaining ring. CMP apparatus and method having soft backed polishing head. CMP providing efficient use of slurry in polishing and planarizing processes. Substrate (semiconductor wafer) produced by CMP apparatus or method. In one embodiment, apparatus (100) includes subcarrier (160) with flexible member (185) attached to lower substrate holding surface (165). Flexible member (185) has hole(s) (195) therein so that pressurized fluid introduced between flexible member and subcarrier (160) directly presses substrate (105) against polishing surface (125). Number and size of holes (195) are selected to provide sufficient friction between flexible member (185) and substrate (105) to cause rotation when drive mechanism rotates subcarrier (160). Subcarrier (160) having port adapted to draw vacuum on cavity (215) between lower surface (165) and flexible member (185). Flexible member and substrate (105) serve as valve (225) to isolate port from cavity when a predetermined vacuum has been achieved.