| 发明名称 |
DC or AC electric field assisted anneal |
| 摘要 |
A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.
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| 申请公布号 |
US2003201515(A1) |
申请公布日期 |
2003.10.30 |
| 申请号 |
US20030413301 |
申请日期 |
2003.04.15 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BALLANTINE ARNE W.;ELLIS-MONAGHAN JOHN J.;FURUKAWA TOSHIHURA;GILBERT JEFFREY D.;MILLER GLENN R.;SLINKMAN JAMES A. |
| 分类号 |
H01L21/22;C21D1/04;H01L21/225;H01L21/26;H01L21/265;H01L21/324;H01L21/326;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/22 |
| 代理机构 |
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