发明名称 |
Defect-free semiconductor templates for epitaxial growth and method of making same |
摘要 |
A method for fabrication of defect-free epitaxial layers on top of a surface of a first defect-containing solid state material includes the steps of selective deposition of a second material, having a high temperature stability, on defect-free regions of the first solid state material, followed by subsequent evaporation of the regions in the vicinity of the defects, and subsequent overgrowth by a third material forming a defect-free layer.
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申请公布号 |
US2003203531(A1) |
申请公布日期 |
2003.10.30 |
申请号 |
US20030456377 |
申请日期 |
2003.06.06 |
申请人 |
SHCHUKIN VITALY;LEDENTSOV NIKOLAI |
发明人 |
SHCHUKIN VITALY;LEDENTSOV NIKOLAI |
分类号 |
H01L21/205;C30B25/18;H01L21/20;H01L21/203;H01L21/324;H01L25/00;H01L33/00;H01S5/02;H01S5/187;H01S5/32;H01S5/323;(IPC1-7):H01L21/00;C30B1/00;H01L21/36 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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