Method for dual-damascene formation using a via plug

摘要

A method for improving a photolithographic patterning process in a dual damascene process including providing at least one via opening in a substrate including a low dielectric constant material; blanket depositing a photo-sensitive resinous layer to fill the at least one via opening; partially removing the photo-sensitive resinous layer to form an at least partially filled via plug; photo-curing the via plug such that an activating light source causes a polymer cross-linking chemical reaction; and, forming a trench line opening disposed substantially over the at least one via opening using a trench line photoresist to pattern the trench line opening.