发明名称 |
Atomic layer deposition of tungsten barrier layers using tungsten carbonyls and boranes for copper metallization |
摘要 |
A method of tungsten layer deposition for copper metallization in semiconductor devices includes reacting a tungsten carbonyl compound and a borane compound using a cyclical deposition technique. In one embodiment, the tungsten barrier layer is formed on a patterned dielectric layer by alternately adsorbing the tungsten carbonyl compound and the borane compound onto a semiconductor substrate. The tungsten layers have substantially uniform dimensions and excellent adhesion to copper such as copper seed layers or direct electroplating of copper onto the tungsten layer.
|
申请公布号 |
US2003203616(A1) |
申请公布日期 |
2003.10.30 |
申请号 |
US20020133787 |
申请日期 |
2002.04.24 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHUNG HUA;GANGULI SESHADRI;CHEN LING |
分类号 |
C23C16/16;C23C16/44;C23C16/455;H01L21/285;H01L21/768;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
C23C16/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|