发明名称 |
Semiconductor wafer and method for fabricating the same |
摘要 |
A Si substrate 1 with a SiGeC crystal layer 8 deposited thereon is annealed to form an annealed SiGeC crystal layer 10 on the Si substrate 1. The annealed SiGeC crystal layer includes a matrix SiGeC crystal layer 7, which is lattice-relieved and hardly has dislocations, and SiC microcrystals 6 dispersed in the matrix SiGeC crystal layer 7. A Si crystal layer is then deposited on the annealed SiGeC crystal layer 10, to form a strained Si crystal layer 4 hardly having dislocations.
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申请公布号 |
US2003203599(A1) |
申请公布日期 |
2003.10.30 |
申请号 |
US20030414106 |
申请日期 |
2003.04.16 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO. , LTD. |
发明人 |
KANZAWA YOSHIHIKO;NOZAWA KATSUYA;SAITOH TOHRU;KUBO MINORU |
分类号 |
H01L21/205;C30B33/00;H01L21/20;H01L29/10;H01L29/165;H01L29/24;(IPC1-7):H01L21/00;C30B1/00;H01L21/42 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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