发明名称 |
Method for fabricating capacitor using electrochemical deposition |
摘要 |
The present invention relates to a method for fabricating a capacitor of a semiconductor memory device using an electrochemical deposition. The method in accordance with the present invention includes the steps of forming a contact hole in an insulating layer formed on a substrate; forming a plug in the contact hole, wherein the plug contains a nitride layer; forming a seed layer on the insulating layer and in the contact hole; forming a sacrificial layer including a trench overlapped with the contact hole; forming a Ru bottom electrode in the trench with electrochemical deposition; removing the sacrificial layer and exposing the Ru bottom electrode, wherein the seed layer not covered with the Ru bottom electrode is exposed; removing the exposed seed layer; forming a dielectric layer on the Ru bottom electrode; and forming a top electrode on the dielectric layer.
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申请公布号 |
US2003203588(A1) |
申请公布日期 |
2003.10.30 |
申请号 |
US20020330125 |
申请日期 |
2002.12.30 |
申请人 |
SONG CHANG-ROCK;CHOI HYUNG-BOK |
发明人 |
SONG CHANG-ROCK;CHOI HYUNG-BOK |
分类号 |
H01L27/04;H01L21/02;H01L21/288;H01L21/768;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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