发明名称 |
METHODS OF FORMING SEMICONDUCTOR CONSTRUCTIONS |
摘要 |
The invention includes a DRAM array having a structure therein which includes a first material separated from a second material by an intervening insulative material. The first material is doped to at least 1x10<17 >atoms/cm<3 >with n-type and p-type dopant. The invention also includes a semiconductor construction in which a doped material is over a segment of a substrate. The doped material has a first type majority dopant therein, and is electrically connected with an electrical ground. A pair of conductively-doped diffusion regions are adjacent the segment, and spaced from one another by at least a portion of the segment. The conductively-doped diffusion regions have a second type majority dopant therein. The invention also encompasses methods of forming semiconductor constructions.
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申请公布号 |
US2003203564(A1) |
申请公布日期 |
2003.10.30 |
申请号 |
US20020133193 |
申请日期 |
2002.04.26 |
申请人 |
MCQUEEN MARK;TRAN LUAN C.;MOULI CHANDRA |
发明人 |
MCQUEEN MARK;TRAN LUAN C.;MOULI CHANDRA |
分类号 |
H01L21/28;H01L21/8242;H01L27/105;(IPC1-7):H01L21/00;H01L21/84;H01L21/823;H01L21/824;H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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