发明名称 |
Use of gate electrode workfunction to improve DRAM refresh |
摘要 |
This invention relates to a method and resulting structure, wherein a DRAM may be fabricated by using silicon midgap materials for transistor gate electrodes, thereby improving refresh characteristics of access transistors. The threshold voltage may be set with reduced substrate doping requirements. Current leakage is improved by this process as well.
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申请公布号 |
US2003203565(A1) |
申请公布日期 |
2003.10.30 |
申请号 |
US20030371689 |
申请日期 |
2003.02.20 |
申请人 |
MCQUEEN MARK;TRAN LUAN C.;MOULI CHANDRA |
发明人 |
MCQUEEN MARK;TRAN LUAN C.;MOULI CHANDRA |
分类号 |
H01L21/28;H01L21/8242;H01L27/105;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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