Aluminium nitride materials and members used for the production of semiconductors

摘要

An object of the present invention is to provide an aluminum nitride material having a high thermal conductivity and reduced volume resistivity at room temperature. An aluminum nitride material has interconnected intergranular phase functioning as electrical conductive phase. The material has a content of the conductive phase of not higher than 20 percent, calculated according to the following formula based on an X-ray diffraction profile. Content of the conductive phase (%) = (Integrated strength of the strongest peak of the conductive phase/Integrated strength of the strongest peak of aluminum nitride phase) x 100. Alternatively, the material has an electric current response index of not lower than 0.9 and not higher than 1.1 defined according to the following formula. Electric current response index = (Electric current at 5 seconds after a voltage is applied/Electric current at 60 seconds after a voltage is applied).