发明名称 |
Silicon nitride film forming apparatus and film forming method |
摘要 |
The present invention is to provide a silicon nitride film forming apparatus and a forming method which makes possible the high reproducibility of film quality or film thickness. The silicon nitride film forming apparatus and forming method in which a heating element (4) and a substrate (7) are arranged in a vacuum vessel (1) connected to a gas exhaust system (2) and a gas supply system (8) to deposit a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system, comprises: an inner wall (9) which is arranged in the vacuum vessel surrounding the heating element and the substrate so as to form a film formation space, a gas introduction means to introduce the raw material gas to the film forming space, and at least one of a heating means (11) and a cooling means (12) of the inner wall arranged to control the inner wall to a predetermined temperature. <IMAGE> |
申请公布号 |
EP1357202(A1) |
申请公布日期 |
2003.10.29 |
申请号 |
EP20030009084 |
申请日期 |
2003.04.19 |
申请人 |
ANELVA CORPORATION;MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MORISAKI, HITOSHI;KAMIYA, YASUSHI;NOMURA, SHUJI;TOTSUKA, MASAHIRO;OKU, TOMOKI;HATTORI, RYO |
分类号 |
C23C16/46;C23C16/34;C23C16/44;H01L21/31 |
主分类号 |
C23C16/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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