| 发明名称 |
Forming strained source drain junction field effect transistors |
| 摘要 |
By providing a high dose germanium implant and then forming a P-type source/drain extension, a strained source/drain junction may be formed. The strained source/drain junction may be shallower and have lower resistivity in some embodiments.
|
| 申请公布号 |
US6638802(B1) |
申请公布日期 |
2003.10.28 |
| 申请号 |
US20020176336 |
申请日期 |
2002.06.20 |
| 申请人 |
INTEL CORPORATION |
发明人 |
HWANG JACK;ANDYKE CRAIG;TAYLOR MITCHELL |
| 分类号 |
H01L21/265;H01L21/336;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/265 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
