Control of diffusion profiles in a thyristor by a grown oxide layer

摘要

The impurity concentration profile of a device formed by the simultaneous closed tube diffusion of Group III-V intermetallics is controlled by depositing an oxide surface on the diffused device and by applying an open tube drive diffusion step. The added diffusion step will cause a redistribution of the Group III and Group V impurities and the oxidation of the surface will remove surface layer portions of the wafer which may have been damaged by mechanical lapping of the wafer prior to the initial diffusion step.