发明名称 Constant pH polish and scrub
摘要 A system and method are provided that maintains a high pH at the wafer surface through the entire polish process and then lowers the pH only when necessary in a controlled fashion after CMP and during the post-polish clean. A fluid having a high pH chemistry and, optionally, surfactants is used instead of deionized water to keep the wafer and polisher components wet and to clean the slurry residue from the polishing pad.
申请公布号 US6638145(B2) 申请公布日期 2003.10.28
申请号 US20010943960 申请日期 2001.08.31
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 HALL STACY W.;BLACK ANDREW J.
分类号 B24B53/007;B24B37/04;H01L21/02;H01L21/304;H01L21/306;H01L21/3105;H01L21/321;(IPC1-7):B24B1/00 主分类号 B24B53/007
代理机构 代理人
主权项
地址