发明名称 |
Constant pH polish and scrub |
摘要 |
A system and method are provided that maintains a high pH at the wafer surface through the entire polish process and then lowers the pH only when necessary in a controlled fashion after CMP and during the post-polish clean. A fluid having a high pH chemistry and, optionally, surfactants is used instead of deionized water to keep the wafer and polisher components wet and to clean the slurry residue from the polishing pad. |
申请公布号 |
US6638145(B2) |
申请公布日期 |
2003.10.28 |
申请号 |
US20010943960 |
申请日期 |
2001.08.31 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
HALL STACY W.;BLACK ANDREW J. |
分类号 |
B24B53/007;B24B37/04;H01L21/02;H01L21/304;H01L21/306;H01L21/3105;H01L21/321;(IPC1-7):B24B1/00 |
主分类号 |
B24B53/007 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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