发明名称 |
Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device |
摘要 |
A ZnO based oxide semiconductor layer is grown on a sapphire substrate 1 by supplying, for example, raw materials made of Zn and O constituting ZnO and a p-type dopant material made of N without supplying an n-type dopant material (a-step). By stopping the supply of the material of O and further supplying an n-type dopant material made of Ga, the semiconductor layer is doped with the p-type dopant and the n-type dopant, thereby forming a p-type ZnO layer (2a) (b-step). By repeating the steps (a) and (b) plural times, a p-type ZnO based oxide semiconductor layer is grown. As a result, N to be the p-type dopant can be doped in a stable carrier concentration also during high temperature growth in which a residual carrier concentration can be reduced, and the carrier concentration of the p-type layer made of the ZnO based oxide semiconductor can be increased sufficiently.
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申请公布号 |
US6638846(B2) |
申请公布日期 |
2003.10.28 |
申请号 |
US20010950830 |
申请日期 |
2001.09.13 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AND ROHM CO., LTD.;ROHM CO LTD |
发明人 |
IWATA KAKUYA;FONS PAUL;MATSUBARA KOJI;YAMADA AKIMASA;NIKI SHIGERU;NAKAHARA KEN |
分类号 |
C30B23/02;H01L21/363;H01L33/28;H01S5/327;(IPC1-7):H01L21/44;H01L29/12 |
主分类号 |
C30B23/02 |
代理机构 |
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