发明名称 |
Chemical-mechanical polishing (CMP) process for shallow trench isolation |
摘要 |
A method of forming shallow trench isolation using CMP is described. A pad oxide layer is grown overlying a silicon semiconductor substrate. A polysilicon layer and a nitride layer are deposited. Trenches are etched through the nitride layer, polysilicon layer, and pad oxide layer into the silicon semiconductor substrate and filled with an oxide layer. A silicon oxynitride layer is deposited overlying the oxide layer. A first polishing is performed to polish away the silicon oxynitride layer and oxide layer using a first slurry having high selectivity of oxide to nitride. A second polishing is performed to polish away the oxide layer using a second slurry having a low selectivity of oxide to nitride. The nitride layer is removed and a third polishing is performed to planarize the oxide layer using a third slurry having high selectivity of oxide to polysilicon.
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申请公布号 |
US6638866(B1) |
申请公布日期 |
2003.10.28 |
申请号 |
US20010981436 |
申请日期 |
2001.10.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHENG JUING-YI;SU KEVIN |
分类号 |
H01L21/308;H01L21/3105;H01L21/762;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/308 |
代理机构 |
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地址 |
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