| 发明名称 |
A MONOLITHICALLY INTEGRATED SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING SUCH STRUCTURE |
| 摘要 |
A heterostructure device includes a ridge-waveguide laser (11) monolithicall y integrated with a ridge-waveguide rear facet monitor [RFM] (12). An integral V-groove etched directly into the device substrate (10) enables passive alignment of an optical fiber (13) to the active region (11-1) of the laser (11). The laser and RFM facets were formed using an in-situ multistep reactive ion etch process.
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| 申请公布号 |
CA2149407(C) |
申请公布日期 |
2003.10.28 |
| 申请号 |
CA19932149407 |
申请日期 |
1993.11.16 |
| 申请人 |
GTE LABORATORIES INCORPORATED |
发明人 |
ROTHMAN, MARK ALAN;SHIEH, CHAN-LONG;ARMIENTO, CRAIG ALFRED;THOMPSON, JOHN ALVIN;NEGRI, ALFRED JOSEPH |
| 分类号 |
G02B6/30;G02B6/36;G02B6/42;H01S5/00;H01S5/02;H01S5/026;H01S5/40;(IPC1-7):H01S3/025;H01S3/18 |
主分类号 |
G02B6/30 |
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