发明名称 Method for calculating the temperature rise profile of a power MOSFET
摘要 A computer program for calculating temperature rise profiles of a power MOSFET for different current waveforms, either single waveforms or multiple waveforms. The user enters the device part number identifying the device, the device Rdson at maximum temperature, and various calculation data, such as the calculation resolution and thermal resistance coordinates. The user also selects the desired current waveform from a library of waveforms. The program then calculates thermal resistance constants for the device as a function of time, and generates an array of thermal resistance values for each waveform subdivision based on the calculation resolution chosen. The instantaneous power values at each current/time subdivision are then calculated by the program and an array of power X thermal resistance difference terms is generated for each time interval. These terms are then summed to generate the temperature rise profile, and the results are displayed graphically or textually.
申请公布号 US6637930(B2) 申请公布日期 2003.10.28
申请号 US20010967921 申请日期 2001.10.02
申请人 INTERNATIONAL RECTIFIER CORPORATION 发明人 BUTCHERS DOUGLAS;TICKNER GRAHAM
分类号 G01K7/42;(IPC1-7):G01K1/14;G01K13/00 主分类号 G01K7/42
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