发明名称 Hot-filament chemical vapor deposition chamber and process with multiple gas inlets
摘要 A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.
申请公布号 US6638839(B2) 申请公布日期 2003.10.28
申请号 US20020205481 申请日期 2002.07.25
申请人 THE UNIVERSITY OF TOLEDO 发明人 DENG XUNMING;POVOLNY HENRY S.
分类号 C23C16/24;C23C16/50;(IPC1-7):H01L21/20;H01L21/31;H01L21/36;H01L21/469 主分类号 C23C16/24
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