Method for manufacturing a semiconductor device having a silicon on insulator substrate

摘要

In a method for manufacturing a MIS type SOI device, when an ion-implantation is carried out to form pocket regions of an n-type MISFET, an ion-implantation mask having a mask opening and covering a body contact region of a p-type MISFET is applied, and when an ion-implantation is carried out to form pocket regions of a p-type MISFET, an ion-implantation mask having a mask opening and covering a body contact region of an n-type MISFET is applied. By preventing the impurities of the conductivity type opposite to that of the body contact region from being introduced into the pathway portion, the body electrical potential can be securely fixed.