发明名称 Semiconductor memory device with block-unit erase type nonvolatile memory
摘要 A CPU calculates a logical block number (LBN) based on a logical sector address (LSA) given by a host and converts the logical block number into a physical address (PBN) of a nonvolatile memory using an address conversion table. Pieces of address conversion table information are dispersively stored in erase blocks (30), and logical block numbers are read from the erase blocks in a power-on state to create the address conversion table on a RAM. When writing data from the host, the data is written in a vacant erase block, and an address of the used vacant erase block is stored by a CPU.
申请公布号 US6639843(B2) 申请公布日期 2003.10.28
申请号 US20020207379 申请日期 2002.07.30
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MIYAUCHI SIGENORI
分类号 G11C16/02;G06F12/00;G06F12/02;G11C16/08;G11C16/16;(IPC1-7):G11C16/04 主分类号 G11C16/02
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