发明名称 Non-volatile memory architecture and integrated circuit comprising a corresponding memory
摘要 A non-volatile memory architecture with a word-based organization includes one selection transistor per word. This selection transistor is used for the selection of the word by the source of the memory cells. In this way, the selection may be done directly by the ouput signals from the address decoders using low voltage. The switching of a high voltage to the gates and the drains of the memory cells is done independently of this selection. This enables the required number of high voltage switches to be reduced.
申请公布号 US6639838(B2) 申请公布日期 2003.10.28
申请号 US20020139621 申请日期 2002.05.06
申请人 STMICROELECTRONICS SA 发明人 FOURNEL RICHARD;THOMAS SIGRID;DRAY CYRILLE
分类号 G11C16/04;(IPC1-7):G11C16/06 主分类号 G11C16/04
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