发明名称 NANOWIRE DEVICES AND METHODS OF FABRICATION
摘要 Nanowire devices are provided based on carbon nanotubes or single-crystal semiconductor nanowires. The nanowire devices may be formed on a silicon substrate or other suitable substrate. Electrodes may be patterned on the substrate. Catalyst sites may be formed on the electrodes prior to nanowire growth. Chemical vapor deposition techniques may be used to grow the nanowires at the catalyst sites. A material such as an insulator may be formed on the nanowires following nanowire growth. The insulator may be planarized using chemical-mechanical polishing or other suitable techniques. The resulting nanowire device may be used in chemical or biological sensors, as a field emitter for displays, or for other applications.
申请公布号 AU2003262121(A1) 申请公布日期 2003.10.27
申请号 AU20030262121 申请日期 2003.04.01
申请人 INTEGRATED NANOSYSTEMS, INC. 发明人 JUN LI;JIE HAN;ALAN, M. CASSELL
分类号 C30B25/02;H01L21/285;H01L21/768;H01L23/532;H01L51/05;H01L51/30 主分类号 C30B25/02
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