发明名称 |
HIGH-SPEED METHOD FOR DEPOSITING DIAMOND FILMS FROM GAS PHASE IN PLASMA OF SHF-DISCHARGE AND PLASMA REACTOR FOR PERFORMING THE SAME |
摘要 |
<p>FIELD: possibility for applying polycrystalline diamond films (plates) for making outlet windows of power SHF irradiation sources. SUBSTANCE: method comprises steps of initiating gaseous mixture of hydrogen and hydrocarbon by increasing electron concentration in plasma of SHF discharge; depositing formed atoms of carbon-containing groups onto substrate for receiving polycrystalline diamond film in the result of surface reactions; realizing initiation of above mentioned gaseous film due to creating in reaction chamber stable nonequilibrium plasma by means of SHF irradiation with power no less than 1 kWt and with frequency significantly exceeding generally used frequency 2.45 GHz; in order to localize plasma in vicinity of substrate forming standing wave in antinodes of which generating and sustaining plasma layers with possibility of controlling their size. Invention provides high-speed deposition of diamond films of high quality onto substrates with diameters more than 100 mm. EFFECT: enhanced quality of diamond films. 15 cl, 8 dwg, 1 tbl, 1 ex</p> |
申请公布号 |
RU2215061(C1) |
申请公布日期 |
2003.10.27 |
申请号 |
RU20020125807 |
申请日期 |
2002.09.30 |
申请人 |
INSTITUT PRIKLADNOJ FIZIKI RAN |
发明人 |
VIKHAREV A.L.;GORBACHEV A.M.;LITVAK A.G.;BYKOV JU.V.;DENISOV G.G.;IVANOV O.A.;KOLDANOV V.A. |
分类号 |
C23C16/27;C23C16/503;C23C16/511;H01J37/32;H05H1/30;(IPC1-7):C23C16/27 |
主分类号 |
C23C16/27 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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