BURIED METAL BODY CONTACT STRUCTURE AND METHOD FOR FABRICATING SOI MOFSET DEVICES

摘要

PURPOSE: A SOI MOSFET device having a buried metal body contact is provided to improve performance and to reduce a size. CONSTITUTION: A buried metal via is disposed under a body area and is aligned with a gate. A buried metal is in contact with a body area but is not in contact with a source or a drain. This structure has a metal interconnection under a device where one or several interconnection layers are in contact with a silicon insulation film from under the device via a buried oxide film. In this way, the bottoms of the source of drain diffusion areas and body areas are also connected.