发明名称 ELECTRON BEAM VAPOR DEPOSITION METHOD AND ELECTRON BEAM VAPOR DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To achieve extending the life of a filament, stabilizing an electron emitting capacity, further improving quality and reliability of an oxide film formed by a vapor deposition process with the use of such a filament, saving time and labor for the vapor deposition process, and reducing the cost. SOLUTION: This vapor deposition method is characterized by controlling each of a temperature of the filament 20 and a partial pressure of oxygen around the filament, while keeping a condition of the combination of them so as not to oxidize tungsten or a material reactive with oxygen, which is a forming material of the filament 20, and raising or lowering each the temperature and the partial pressure of oxygen, to cancel or reduce thermal oxidation of the filament 20. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003301261(A) 申请公布日期 2003.10.24
申请号 JP20020111871 申请日期 2002.04.15
申请人 SONY CORP 发明人 SHIROMIZU SHINICHIRO
分类号 C23C14/30;H01J9/02;H01J11/22;H01J11/34;H01J11/40;(IPC1-7):C23C14/30;H01J11/02 主分类号 C23C14/30
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