| 摘要 |
PROBLEM TO BE SOLVED: To contrive speed up and the reduction of a power consumption, in a semiconductor device, such as an LSI or the like. SOLUTION: A porous Si layer 18 is formed by anodizing the one end side surface of an Si substrate 10 (S11) and Si<SB>1-x</SB>Ge<SB>x</SB>is grown on the porous Si layer 18 through epitaxial growth to form a lattice relaxation layer of a thin film (S12). Next, a support substrate 17 is laminated on the lattice relaxation layer 12 via an insulation layer 16 (S13), and thereafter, the Si substrate 10 and the porous Si layer 18 are removed to expose the lattice relaxation layer 12 (S14, S15). Subsequently, Si is grown on the surface of the lattice relaxation layer 12 through epitaxial growth to form a strain Si layer 14 (S16). COPYRIGHT: (C)2004,JPO
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