发明名称 |
THIN FILM TRANSISTOR, ITS MANUFACTURING METHOD, AND ACTIVE MATRIX DISPLAY COMPRISING THIN FILM TRANSISTOR |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor having a high mobility in which aging of the threshold value is improved, its fabricating method, and an active matrix display comprising the thin film transistor. <P>SOLUTION: The thin film transistor comprises an insulating film 12 formed on a substrate 10, semiconductor layers 16a and 16b formed on an insulating film 14, a gate electrode 18, a source electrode 20 connected with the semiconductor layers, and a drain electrode 22 wherein the semiconductor layers 16a and 16b are formed such that electronic affinity decreases as they approach the insulating film 14 along the thickness direction thereof. <P>COPYRIGHT: (C)2004,JPO</p> |
申请公布号 |
JP2003303969(A) |
申请公布日期 |
2003.10.24 |
申请号 |
JP20020098466 |
申请日期 |
2002.04.01 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
TSUJIMURA TAKATOSHI;KOBAYASHI KAZUMASA;MOROOKA MITSUO;MIWA KOICHI |
分类号 |
G02F1/1368;H01L29/786;(IPC1-7):H01L29/786;G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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