| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high breakdown voltage and a low resistance, and its fabricating method. SOLUTION: A part of an Si substrate 1 located in a first region Re1 is removed selectively by sand blasting to set the thickness of a second region Re2 at 400μm and the thickness of a recess, i.e., the first region Re1, at 200μm. An n-epitaxial layer 3 is formed on the side of the Si substrate 1 opposite to the recessed side. The n-epitaxial layer 3 is partially implanted with ions to form a p well 4 and a source region 5. A gate insulation film 6, a gate electrode 9, a source electrode 8 and a drain electrode 7 are formed such that the first region Re1 of the Si substrate 1 and the n-epitaxial layer 3 becomes an operating region. Sheet resistance can be decreased in the first region Re1 of the Si substrate 1 because the operating region is thick and a mechanical strength can be held in the second region Re2. COPYRIGHT: (C)2004,JPO |
