METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To uniformly form a film in a short film formation time with the film being composed of at least silicon and germanium and in which the composition ratio of germanium is made to have an inclination along the film thickness direction. SOLUTION: In a temperature control part 61, while a temperature change process for heating a wafer W and a temperature control process wherein the change of the temperature of the wafer W is smaller than that of the temperature change process are repeated alternately for each prescribed period, a heater 2 is controlled in such a manner that the temperature of the wager W is changed from a low temperature (e.g., 400°C) to a high temperature (e.g., 700°C). A gas control part 62 controls a valve member 31 in such a manner that a reaction gas is supplied in a reaction tube 1 in the temperature control process and the supply of the reaction gas is prevented in the temperature change process. COPYRIGHT: (C)2004,JPO