| 摘要 |
PROBLEM TO BE SOLVED: To perform heavy plating on the surface of a small surface area when performing electrolytic plating to a plating part of one surface side and the other surface side of an insulation base material in a tape carrier for a semiconductor device. SOLUTION: In a tape carrier for a semiconductor device, a wiring pattern 7 including a land 7a is formed on one surface of an insulation base material 5; the land 7a is exposed to the other surface side of the insulation base material 5 via an opening (blind via 1a) provided to the insulation base material 5; a conductive layer 4b is formed on the surface of the wiring pattern 7 by performing electrolytic plating to the one surface and the other surface of the insulation base material 5; and a conductor layer 4a for shallowing the inside of an opening is provided to a part wherein the land 7a is exposed via the opening. A conductive dummy pattern 3 is formed on the other surface side of the insulation base material 5, the surface area of a plating part existing in the other surface side of the insulation base material 5 is thereby made larger than the surface area of the wiring pattern 7 existing in the one surface side, and the plating thickness of the conductor layer 4a formed inside an opening wherein the land 7a is exposed is made thick. COPYRIGHT: (C)2004,JPO
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