SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To form a barrier layer that sufficiently withstands etching as an etching stopper to protect a semiconductor film from the etching, enables impurities to move in an oxide film in heat treatment for gettering, and has satisfactory reproducibility, and to use the barrier layer for carrying out the gettering of the impurities contained in the semiconductor film. SOLUTION: The barrier layer is a silicon oxide film. The ratio of suboxide contained in the barrier layer is set to at least 18%. COPYRIGHT: (C)2004,JPO