发明名称 POWER PRESSURE-WELDING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that the temperature of an electrilytic capacitor rises due to heat generated at a power pressure-welding semiconductor element, to shorten a life, related to a power pressure-welding semiconductor device in which the power pressure-welding semiconductor element is mounted on a printed board with the electrolytic capacitor mounted close to it. SOLUTION: A heat sink whose cross section is L-shaped or U-shaped is mounted on a part of the side on which the electrolytic capacitor is fitted which is close to a fitting point of the electrolytic capacitor to contact a printed board. The contact area between the heat sink and the printed board is preferred to be larger. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003303839(A) 申请公布日期 2003.10.24
申请号 JP20020109125 申请日期 2002.04.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 MORISHITA KAZUHIRO
分类号 H01L23/40;H01L21/52;(IPC1-7):H01L21/52 主分类号 H01L23/40
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